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2SC3138 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3138 High Voltage Amplifier Applications Unit: mmHigh Voltage Switching Applications High voltage: VCBO = 200 V (max) VCEO = 200 V (max) Small flat package Complementary to 2SA1255 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 200 VCollector-emitter voltage VCEO 200 VEmitter-base voltage VEBO 5 VCollector current IC 50 mABase current IB 20 mACollector power dissipation PC 150 mW JEDEC TO-236MODJunction temperature Tj 125 C JEITA SC-59Storage temperature range Tstg -55 to 125 C TOSHIBA 2-3F1ANote: Using continuously under heavy loads (e.g. the application of high Weight: 0.012 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decr