Скачать даташит для 2sc6124:

2SC6124 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6124 Power Amplifier Applications Unit mm Power Switching Applications Low collector emitter saturation voltage VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching tstg = 400 ns (typ.) Complementary to 2SA2206 Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 160 V VCEX 160 V 1 BASE Collector-emitter voltage 2 COLLECTOR (HEAT SINK) VCEO 80 V 3 EMITTER Emitter-base voltage VEBO 7 V DC IC 2 A JEDEC Collector current Pulse ICP 4 A JEITA SC-62 Base current IB 0.5 A TOSHIBA 2-5K1A t = 10 s PC 2.5 Weight 0.05 g (typ.) Collector power dissipation W (Note 1) DC 1.0 Junction temperature Tj 150 C Storage temperature range Tstg -55 to 150 C Note 1 Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 m