Скачать даташит для 2sc6127:

2SC6127 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6127 High Voltage Switching Applications Unit mm High Voltage Amplifier Applications High voltage VCEO = 800 V Absolute Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 800 V Collector-emitter voltage VCEO 800 V Emitter-base voltage VEBO 5 V Collector current IC 50 mA Base current IB 25 mA Ta = 25 C 1.0 Collector power PC W dissipation Tc = 25 C 10 Junction temperature Tj 150 C Storage temperature range Tstg -55 to 150 C JEDEC Note Using continuously under heavy loads (e.g. the application of high JEITA temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the TOSHIBA 2-7J1A reliability significantly even if the operating conditions (i.e. Weight 0.36 g

Ключевые слова - ALL TRANSISTORS DATASHEET

 2sc6127.pdf Проектирование, MOSFET, Мощность

 2sc6127.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 2sc6127.pdf База данных, Инновации, ИМС, Транзисторы