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2CS6134 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6134 High-Speed Switching Applications Unit mm DC-DC Converter Applications 2.1 0.1 Strobe Applications 1.7 0.1 High DC current gain hFE = 250 to 400 (IC = 0.3A) 1 Low collector-emitter saturation voltage VCE (sat) = 0.14 V (max) 3 2 High-speed switching tf = 25 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V 1 Gate Collector-emitter voltage VCEX 50 V 2 Source Collector-emitter voltage VCEO 30 V 3 Drain Emitter-base voltage VEBO 6 V UFM DC IC 3.0 Collector current A JEDEC Pulse ICP 5.0 JEITA Base current IB 0.3 A PC (Note1) 800 TOSHIBA 2-2U1A Collector power dissipation mW PC (Note2) 500 Weight 6.6 mg (typ.) Junction temperature Tj 150 C Storage temperature range Tstg -55