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2CS6134 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6134 High-Speed Switching Applications Unit: mmDC-DC Converter Applications 2.10.1Strobe Applications 1.70.1 High DC current gain: hFE = 250 to 400 (IC = 0.3A) 1 Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) 32 High-speed switching: tf = 25 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 50 V1 :Gate Collector-emitter voltage VCEX 50 V2 :Source Collector-emitter voltage VCEO 30 V 3 :Drain Emitter-base voltage VEBO 6 V UFM DC IC 3.0Collector current A JEDEC Pulse ICP 5.0JEITA Base current IB 0.3 APC (Note1) 800 TOSHIBA 2-2U1ACollector power dissipation mW PC (Note2) 500 Weight: 6.6 mg (typ.) Junction temperature Tj 150 CStorage temperature range Tstg -55