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2SC6135 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6135 High-Speed Switching Applications Unit mm DC-DC Converter Applications 2.1 0.1 Strobe Applications 1.7 0.1 1 High DC current gain hFE = 400 to 1000 (IC = 0.1A) Low collector-emitter saturation voltage VCE (sat) = 0.17 V (max) 3 2 High-speed switching tf = 85 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V 1 Gate Collector-emitter voltage VCEX 80 V 2 Source Collector-emitter voltage VCEO 50 V 3 Drain Emitter-base voltage VEBO 7 V UFM DC IC 1.0 Collector current A JEDEC Pulse ICP 2.0 JEITA Base current IB 0.1 A TOSHIBA 2-2U1A PC (Note1) 800 Collector power dissipation mW Weight 6.6 mg (typ.) PC (Note2) 500 Junction temperature Tj 150 C Storage temperature range Tstg -