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2SC6135 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6135 High-Speed Switching Applications Unit: mmDC-DC Converter Applications 2.10.1Strobe Applications 1.70.11 High DC current gain: hFE = 400 to 1000 (IC = 0.1A) Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max) 32 High-speed switching: tf = 85 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 100 V1: Gate Collector-emitter voltage VCEX 80 V2: Source Collector-emitter voltage VCEO 50 V 3: Drain Emitter-base voltage VEBO 7 V UFM DC IC 1.0Collector current A JEDEC Pulse ICP 2.0JEITA Base current IB 0.1 ATOSHIBA 2-2U1APC (Note1) 800 Collector power dissipation mW Weight: 6.6 mg (typ.) PC (Note2) 500 Junction temperature Tj 150 CStorage temperature range Tstg -