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TENTATIVE 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) 2SK3563 unit Switching Regulator Applications 10 0.3 2.7 0.2 3.2 0.2 Low drain-source ON resistance RDS (ON) = 1.35 (typ.) High forward transfer admittance Yfs = 3.5S (typ.) Low leakage current IDSS = 100 A (VDS = 500 V) Enhancement-mode Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25 C) 1.1 1.1 Characteristics Symbol Rating Unit 0.69 0.15 Drain-source voltage VDSS 500 V 2.54 0.25 2.54 0.25 Drain-gate voltage (RGS = 20 k ) VDGR 500 V Gate-source voltage VGSS 30 V 1 2 3 DC (Note 1) ID 5 Drain current A Pulse (t = 1 ms) IDP 20 (Note 1) 1. Gate Drain power dissipation (Tc = 25 C) PD 35 W 2. Drain Single pulse avalanche energy EAS 180 mJ 3. Source (Note 2) Avalanche current IAR