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TENTATIVE 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) 2SK3563 unit Switching Regulator Applications 100.3 2.70.23.20.2 Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: |Yfs| = 3.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) 1.1 1.1 Characteristics Symbol Rating Unit0.690.15Drain-source voltage VDSS 500 V2.540.25 2.540.25Drain-gate voltage (RGS = 20 k) VDGR 500 VGate-source voltage VGSS 30 V1 2 3 DC (Note 1) ID 5 Drain current A Pulse (t = 1 ms) IDP 20 (Note 1)1. GateDrain power dissipation (Tc = 25C) PD 35 W2. DrainSingle pulse avalanche energy EAS 180 mJ 3. Source(Note 2)Avalanche current IAR