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Product specification 2SD965-Q Unit mm SOT-89 1.50 0.1 4.50 0.1 1.80 0.1 Features Low collector-emitter saturation voltage VCE(sat) Satisfactory operation performances at high efficiency with 1 2 3 the low-voltage power supply. 0.44 0.1 0.48 0.1 0.53 0.1 3.00 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 5 V Collector current IC 5 A Collector power dissipation PC 0.5 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100 A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA. IB=0 20 V Emitter-base breakdown volta

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 2sd965-q.pdf Проектирование, MOSFET, Мощность

 2sd965-q.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 2sd965-q.pdf База данных, Инновации, ИМС, Транзисторы