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2sd965-q2sd965-q

Product specification2SD965-QUnit:mmSOT-891.50 0.14.500.11.800.1 Features Low collector-emitter saturation voltage VCE(sat) Satisfactory operation performances at high efficiency with 1 2 3the low-voltage power supply.0.440.10.480.1 0.530.13.000.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 40 VCollector-emitter voltage VCEO 20 VEmitter-base voltage VEBO 5 VCollector current IC 5 ACollector power dissipation PC 0.5 WJunction temperature Tj 150Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25Parameter Symbol Test conditions Min Typ Max UnitCollector-base breakdown voltage V(BR)CBO IC=100A, IE=0 40 VCollector-emitter breakdown voltage V(BR)CEO IC= 1mA. IB=0 20 VEmitter-base breakdown volta

 

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 2sd965-q.pdf Проектирование, MOSFET, Мощность

 2sd965-q.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 2sd965-q.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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