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P1504BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 15m @VGS = 10V 40V 40A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage 20 TC = 25 C 40 ID Continuous Drain Current TC = 100 C 25 A IDM 85 Pulsed Drain Current1 IAS Avalanche Current 22 EAS Avalanche Energy L = 0.3mH 72 mJ TC = 25 C 42 PD Power Dissipation W TC = 100 C 17 TJ, TSTG Operating Junction & Storage Temperature Range -55 to 150 C TL 275 C Lead Temperature(1/16 from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RqJC 3 C / W Junction-to-Ambient RqJA 75 1 Pulse width limited by maximum junction temperature. Ver 1.1 1 2013-3-20 P1504BDG N-