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P1504BDGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID15m @VGS = 10V40V 40ATO-252ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 40VVGSGate-Source Voltage 20TC = 25 C40IDContinuous Drain CurrentTC = 100 C25AIDM85Pulsed Drain Current1IASAvalanche Current 22EASAvalanche Energy L = 0.3mH 72 mJTC = 25 C42PDPower Dissipation WTC = 100 C17TJ, TSTGOperating Junction & Storage Temperature Range -55 to 150 CTL275 CLead Temperature(1/16 from case for 10 sec.)THERMAL RESISTANCE RATINGSTHERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITSJunction-to-Case RqJC 3C / WJunction-to-Ambient RqJA 751Pulse width limited by maximum junction temperature.Ver 1.1 1 2013-3-20P1504BDGN-