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P1603BEB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID3 16m @VGS = 10V 30V 21A PDFN 2X2S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC = 25 C 21 TC = 100 C 17 ID Continuous Drain Current3 TA = 25 C 8 A TA= 70 C 6 IDM 60 Pulsed Drain Current1 IAS Avalanche Current 18 EAS Avalanche Energy L = 0.1 mH 16 mJ TC = 25 C 16 TC = 100 C 10 PD Power Dissipation W TA= 25 C 2 TA= 70 C 1.2 Tj, Tstg Operating Junction & Storage Temperature Range -55 to 150 C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS RqJA 65 Junction-to-Ambient2 C / W Junction-to-Case RqJC 7.6 1 Pulse width limited by maximum junction temperature. 2 The value of