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IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 400 Available Reduced Gate Drive Requirement RDS(on) ( )VGS = 10 V 0.30 Enhanced 30V VGS Rating RoHS* COMPLIANT Reduced Ciss, Coss, Crss Qg (Max.) (nC) 76 Isolated Central Mounting Hole Qgs (nC) 20 Dynamic dV/dt Rated Qgd (nC) 37 Repetitive Avalanche Rated Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION This new series of low charge Power MOSFETs achieve TO-247AC significantly lower gate charge over conventional MOSFETs. Utilizing advanced MOSFETs technology the device improvements allow for reduced gate drive requirements, G faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of MOSFETs offer the designer