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IRFP350LC, SiHFP350LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 400Available Reduced Gate Drive RequirementRDS(on) ()VGS = 10 V 0.30 Enhanced 30V VGS RatingRoHS*COMPLIANT Reduced Ciss, Coss, CrssQg (Max.) (nC) 76 Isolated Central Mounting HoleQgs (nC) 20 Dynamic dV/dt RatedQgd (nC) 37 Repetitive Avalanche RatedConfiguration Single Compliant to RoHS Directive 2002/95/ECDDESCRIPTIONThis new series of low charge Power MOSFETs achieveTO-247ACsignificantly lower gate charge over conventional MOSFETs.Utilizing advanced MOSFETs technology the deviceimprovements allow for reduced gate drive requirements,Gfaster switching speeds and increased total system savings.These device improvements combined with the provenruggedness and reliability of MOSFETs offer the designer