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IRFR110, SiHFR110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 0.54 Repetitive Avalanche Rated Qg (Max.) (nC) 8.3 Surface Mount (IRFR110, SiHFR110) Qgs (nC) 2.3 Available in Tape and Reel Qgd (nC) 3.8 Fast Switching Configuration Single Ease of Paralleling Compliant to RoHS Directive 2002/95/EC D DESCRIPTION DPAK Third generation Power MOSFETs from Vishay provide the (TO-252) designer with the best combination of fast switching, ruggedized device design, low on-resistance and D G cost-effectiveness. The DPAK is designed for surface mounting using vapor S phase, infrared, or wave soldering techniques. Power G S dissipation levels up to 1.5 W are possible in typical surface mount applications. N-Channel

 

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 irfr110pbf sihfr110.pdf Проектирование, MOSFET, Мощность

 irfr110pbf sihfr110.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 irfr110pbf sihfr110.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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