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SiHG22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.18 Reduced switching and conduction losses Available Qg max. (nC) 110 Ultra low gate charge (Qg) Qgs (nC) 15 Avalanche energy rated (UIS) Available Qgd (nC) 32 Material categorization for definitions of Configuration Single compliance please see www.vishay.com/doc?99912 Note D TO-247AC * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. APPLICATIONS G Server and telecom power supplies S Switch mode powe

 

Ключевые слова - ALL TRANSISTORS DATASHEET

 sihg22n65e.pdf Проектирование, MOSFET, Мощность

 sihg22n65e.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 sihg22n65e.pdf База данных, Инновации, ИМС, Транзисторы

 

 

 


 
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