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SQM50028EM www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES TO-263 7-Lead TrenchFET power MOSFET Package with low thermal resistance 100 % Rg and UIS tested AEC-Q101 qualified Material categorization for definitions of compliance please see S S D D www.vishay.com/doc?99912 G G D Top View PRODUCT SUMMARY VDS (V) 60 RDS(on) ( ) at VGS = 10 V 0.00200 G ID (A) 120 Configuration Single N-Channel MOSFET Package TO-263-7L S ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-source voltage VDS 60 V Gate-source voltage VGS 20 TC = 25 C 120 Continuous drain current a ID TC = 125 C 120 Continuous source current (diode conduction) a IS 120 A Pulsed drain current b IDM 240 Single pulse avalanche current IAS 75 L = 0.1 mH Single pulse avalanc