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BC337/BC338 NPN General Purpose Transistor COLLECTOR 1 P b Lead(Pb)-Free TO-92 2 BASE 1 3 2 3 EMITTER Maximum Ratings(TA=25 C unless otherwise noted) Rating Symbol BC337 BC338 Unit VCBO Collector-Base voltage 50 30 V VCEO V Collector-Emitter voltage 45 25 VEBO V Emitter-Base voltage 5.0 5.0 Collector Current Continuous lC mA 800 Total Device Dissipation PD 625 mW/ C Alumina Substrate,TA=25 C TJ Operating Junction Temperature Range -55 to +150 C Tstg C Storage Junction Temperature Range -55 to +150 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC=100 A, IE=0 BC337 V(BR)CBO 50 - - V BC338 30 Collector-Emitter Breakdown Voltage IC=10mA, IB=0 V(BR)CEO 45 BC337 - - V BC338 25 Emitter-Base Breakdown Voltage V(BR)EBO 5.0 - - Vdc BC337 IC=10 A, IC=0 BC338