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R13007DL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222FEATURES 2 Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed VD1333PACKAGE 3TO-220 444Electrical Characteristics 41 Base(B) 2 Collector(C) 3 Emitter(E) 4.14.1 4.1 Absolute Maximum Ratings 4.1 Tamb= 25 unless specified PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 400 V Collector-Emittor Voltage VCEO 200 V Emittor- Base Voltage VEBO 9 V Collector Cur