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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 DEVICES LEVELS JANSM 3K Rads (Si) 2N2221A 2N2222A JANSD 10K Rads (Si) 2N2221AL 2N2222AL JANSP 30K Rads (Si) 2N2221AUA 2N2222AUA JANSL 50K Rads (Si) 2N2221AUB 2N2222AUB JANSR 100K Rads (Si) 2N2221AUBC 2N2222AUBC JANSF 300K Rads (Si) JANSG 500K Rads (Si) JANSH 1MEG Rads (Si) ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 50 VdcCollector-Base Voltage VCBO 75 VdcEmitter-Base Voltage VEBO 6.0 VdcCollector Current IC 800 mAdcTotal Power Dissipation @ TA = +25C TO-18 (TO-206AA) 2N2221A