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SEMICONDUCTOR 2N2904U1TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.BB1FEATURESDIM MILLIMETERS1 6_Low Leakage Current A 2.00 + 0.20_2 5 A1 1.3 + 0.1: ICEX=50nA(Max.), IBL=50nA(Max.)_B 2.1 + 0.13 4 D _B1 1.25 + 0.1@VCE=30V, VEB=3V.C 0.65Excellent DC Current Gain Linearity.D 0.2+0.10/-0.05G 0-0.1Low Saturation Voltage _H 0.9 + 0.1T T 0.15+0.1/-0.05: VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.Low Collector Output CapacitanceG: Cob=4pF(Max.) @VCB=5V.1. Q1 BASE2. Q2 BASE3. Q2 COLLECTOR4. Q2 EMITTER5. Q1 EMITTER6. Q1 COLLECTOR MAXIMUM RATING (Ta=25 )CHARACTERISTIC SYMBOL RATING UNITUS6VCBOCollector-Base Voltage 60 VVCEOCollector-Emitter Voltage 40 VVEBO EQUIVALENT CIRCUIT (TOP VIEW)Emitter-Base Voltage 6 VICCollector Current 200 mA6 5 4IBBase Curren