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SEMICONDUCTOR 2N2906ETECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. BB1FEATURES1 6 DIM MILLIMETERSLow Leakage Current _A 1.6 + 0.05_A1 1.0 + 0.05: ICEX=-50nA(Max.), IBL=-50nA(Max.)2 5_B 1.6 + 0.05_B1 1.2 + 0.05@VCE=-30V, VEB=-3V.C 0.503 4Excellent DC Current Gain Linearity._D 0.2 + 0.05_H 0.5 + 0.05Low Saturation Voltage _J 0.12 + 0.05P P: VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. P 5Low Collector Output Capacitance: Cob=4.5pF(Max.) @VCB=5V.1. Q1 EMITTER 2. Q1 BASE3. Q2 COLLECTOR4. Q2 EMITTER5. Q2 BASE6. Q1 COLLECTOR MAXIMUM RATING (Ta=25 )CHARACTERISTIC SYMBOL RATING UNITTES6VCBOCollector-Base Voltage -40 VVCEOCollector-Emitter Voltage -40 VVEBOEmitter-Base Voltage -5 VEQUIVALENT CIRCUIT (TOP VIEW)ICCollector Current -200 mAIBBase Curr