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SEMICONDUCTOR 2N2906UTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.BB1FEATURESDIM MILLIMETERS1 6_Low Leakage Current A 2.00 + 0.20_2 5 A1 1.3 + 0.1: ICEX=-50nA(Max.), IBL=-50nA(Max.)_B 2.1 + 0.13 4 D _B1 1.25 + 0.1@VCE=-30V, VEB=-3V.C 0.65Excellent DC Current Gain Linearity.D 0.2+0.10/-0.05G 0-0.1Low Saturation Voltage _H 0.9 + 0.1T T 0.15+0.1/-0.05: VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA.Low Collector Output CapacitanceG: Cob=4.5pF(Max.) @VCB=5V.1. Q1 EMITTER 2. Q1 BASE3. Q2 COLLECTOR4. Q2 EMITTER5. Q2 BASE6. Q1 COLLECTOR MAXIMUM RATING (Ta=25 )CHARACTERISTIC SYMBOL RATING UNITUS6VCBOCollector-Base Voltage -40 VVCEOCollector-Emitter Voltage -40 VVEBOEmitter-Base Voltage -5 VEQUIVALENT CIRCUIT (TOP VIEW)ICCollector Current -200 mA6 5 4I