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TECHNICAL DATA PNP HIGH VOLTAGE SILICON TRANSISTOR Qualified per MIL-PRF-19500/397 Devices Qualified Level JAN, JANTX 2N3743 2N4930 2N4931 JANTXV MAXIMUM RATINGS Ratings Sym 2N3743 2N4930 2N4931 Unit Collector-Emitter Voltage 300 200 250 Vdc VCEO Collector-Base Voltage 300 200 250 Vdc VCBO Emitter-Base Voltage 5.0 Vdc VEBO Collector Current 200 mAdc IC Total Power Dissipation @T = +250C 1 1.0 W APT @T = +250C 2 5.0 W C0Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 C TO-39* (TO-205AD) THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit 0Thermal Resistance Junction-to-Case 35 C/W RJC 1) Derate linearly 5.71 mW/0C for T > +250C A2) Derate linearly 28.6 mW/0C for T > +250C C*See appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteris