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2N4898X2N4899X2N4900XMECHANICAL DATADimensions in mm (inches)PNP EPITAXIAL BASEMEDIUM POWERTRANSISTOR6.35 (0.250)8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.3.86 (0.145)rad.APPLICATIONSMedium power, low frequency PNPbipolar transistor in a hermeticallysealed TO66 metal package.1.27 (0.050)1.91 (0.750)4.83 (0.190)5.33 (0.210)9.14 (0.360)min.TO66 Metal Package.ABSOLUTE MAXIMUM RATINGS(Tcase = 25C unless otherwise stated)2N4898X 2N4899X 2N4900XV(BR)CBO Collector Base Breakdown Voltage 40V 60V 80VV(BR)CEO Collector Emitter Breakdown Voltage 40V 60V 80VV(BR)EBO Emitter Base Breakdown Voltage 5VIC Continuous Collector Current 4AIB Base Current 1APD Total Power Dissipation 25WTC Operating Case Temperature Range 65 to +200CTstg Storage Temperature Range 65 to +200