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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES LEVELS 2N5010 2N5013 2N5010S 2N5013S JAN2N5011 2N5014 2N5011S 2N5014S JANTX2N5012 2N5015 2N5012S 2N5015S JANTXVABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value UnitCollector-Emitter Voltage 2N5010 500 Vdc 2N5011 600 Vdc2N5012 700 VdcVCER 2N5013 800 Vdc2N5014 900 Vdc2N5015 1000 VdcTO-5 2N5010 thru 2N5015 Collector-Base Voltage 2N5010 500 Vdc 2N5011 600 Vdc2N5012 700 VdcVCBO 2N5013 800 Vdc2N5014 900 Vdc2N5015 1000 VdcEmitter-Base Voltage VEBO 5 VdcCollector Current IC 200 mAdcBase Current IB 20 mAdcTotal Power Dissipation TO-39 @ TA = +25C Pt 1.0 W 2N5010S thr

 

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 2n5015sx.pdf Проектирование, MOSFET, Мощность

 2n5015sx.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 2n5015sx.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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