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SEMICONDUCTOR2N5401TECHNICAL DATA 2N5401 TRANSISTOR (PNP) B C FEATURE Switching and Amplification in High Voltage Applications such as Telephony DIM MILLIMETERS Low Current(Max. 600mA) A 4.70 MAXEB 4.80 MAXG High Voltage(Max.160v) C 3.70 MAXDD 0.55 MAX E 1.00F 1.27G 0.85H 0.45_MAXIMUM RATINGS (Ta=25 unless otherwise noted) HJ 14.00 0.50+L 2.30F FM 0.51 MAXSymbol Parameter Value Unit1. EMITTER1 2 3VCBO Collector-Base Voltage -160 V 2. BASEVCEO Collector-Emitter Voltage -150 V 3. COLLECTORVEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A TO-92PC Collector Power Dissipation 0.625 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max UnitCollector-