Скачать даташит для 2n5401:

SEMICONDUCTOR 2N5401TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.B CFEATURES High Collector Breakdwon VoltageN DIM MILLIMETERS: VCBO=-160V, VCEO=-150VA 4.70 MAXEKLow Leakage Current. B 4.80 MAXGC 3.70 MAXD: ICBO=-50nA(Max.) @VCB=-120VD 0.45E 1.00Low Saturation VoltageF 1.27G 0.85: VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mAH 0.45_Low Noise : NF=8dB (Max.) HJ 14.00 + 0.50K 0.55 MAXF FL 2.30M 0.45 MAXN 1.001 2 3MAXIMUM RATING (Ta=25) 1. EMITTER2. BASE3. COLLECTORCHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage -160 VVCEOCollector-Emitter Voltage -150 VTO-92VEBOEmitter-Base Voltage -5 VICCollector Current -600 mAIBBase Current -100 mACollector Power DissipationPC625 mW(Ta=25)Collector Power DissipationPC1.5