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2n66542n6654

isc Silicon NPN Power Transistor 2N6654DESCRIPTIONHigh Voltage CapabilityHigh Current Current CapabilityLow Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesinged for use in switching and linear applications inmilitary and power conversion.Absolute maximum ratings(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 400 VCBOV Collector-Emitter Voltage 350 VCEOV Emitter-Base Voltage 7 VEBOI Collector Current-Continuous 20 ACI Collector Current-Peak 30 ACMI Base Current-Continuous 10 ABCollector Power DissipationP 150 WC@T =25CT Junction Temperature -65~175 jT Storage Temperature Range -65~200 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITR Thermal Resistance,Junction to Case 1.0 /Wt

 

Ключевые слова - ALL TRANSISTORS DATASHEET

 2n6654.pdf Проектирование, MOSFET, Мощность

 2n6654.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 2n6654.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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