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2N6790Data Sheet December 20013.5A, 200V, 0.800 Ohm, N-Channel Power FeaturesMOSFET 3.5A, 200VThe 2N6790 is an N-Channel enhancement mode silicon rDS(ON) = 0.800gate power MOS field effect transistor designed for SOA is Power Dissipation Limitedapplications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high Nanosecond Switching Speedspower bipolar switching transistors requiring high speed and Linear Transfer Characteristicslow gate drive power. This device can be operated directly from an integrated circuit. High Input Impedance Majority Carrier DeviceOrdering Information Related LiteraturePART NUMBER PACKAGE BRAND- TB334 Guidelines for Soldering Surface Mount 2N6790 TO-205AF 2N6790Components to PC BoardsNOTE: When ordering, include the entire part