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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS 2N6796 2N6796U JANJANTXJANTXVABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain Source Voltage VDS 100 VdcGate Source Voltage VGS 20 VdcContinuous Drain Current ID1 8.0 AdcTC = +25C Continuous Drain Current ID2 5.0 AdcTC = +100C (1)Max. Power Dissipation Ptl 25 W(2)Drain to Source On State Resistance Rds(on) 1.8 Operating & Storage Temperature Top, Tstg -55 to +150 C Note: (1) Derated Linearly by 0.2 W/C for TC > +25C (2) VGS = 10Vdc, ID = 5.

 

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 2n6796u.pdf Проектирование, MOSFET, Мощность

 2n6796u.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 2n6796u.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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