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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS JAN 2N6798 2N6798UJANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain Source Voltage VDS 200 VdcGate Source Voltage VGS 20 VdcContinuous Drain Current ID1 5.5 AdcTC = +25C Continuous Drain Current ID2 3.5 AdcTC = +100C (1)Max. Power Dissipation Ptl 25 W (2)Drain to Source On State Resistance Rds(on) 0.4 Operating & Storage Temperature Top, Tstg -55 to +150 CNote: (1) Derated Linearly by 0.2 W/C for TC > +25C (2) VGS = 10Vdc, ID = 3.5A TO-205AF (formerly TO-39) ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted

 

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 2n6798u.pdf Проектирование, MOSFET, Мощность

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