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N-CHANNEL ENHANCEMENT MODE MOSFET 2N7002C1A / 2N7002C1B, 2N7002C1C / 2N7002C1D VDSS = 60V , ID = 115mA, RDS(ON) = 7.5 Fast Switching Low Threshold Voltage Integral Source-Drain Body Diode Hermetic Ceramic Surface Mount Package (SOT-23 compatible) High Reliability Screening Options Available Variants C1C & C1D with solder dip finished pads (63Sn/37Pb) ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VDS Drain Source Voltage 60V VGS Gate Source Voltage 40V ID TC = 25C Continuous Drain Current 115mA ID TC = 100C Continuous Drain Current 75mA IDM Pulsed Drain Current (1) 800mA PT TA 25C Total Power Dissipation at 350mW De-rate TC > 25C 2.8mW/C TJ Operating Temperature Range -55 to +150C Tstg Storage Temperature Range -55 to +150C THERMAL PROPERTIES Symbols