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Discrete POWER & SignalTechnologies2N7052 2N7053 NZT7053CECC TO-92BBTO-226CESOT-223BENPN Darlington TransistorThis device is designed for applications requiring extremely highgain at collector currents to 1.0 A and high breakdown voltage.Sourced from Process 06.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 100 VVCBO Collector-Base Voltage 100 VVEBO Emitter-Base Voltage 12 VIC Collector Current - Continuous 1.5 AOperating and Storage Junction Temperature Range -55 to +150TJ, Tstg C*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications in