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SMD Type TransistorsNPN General Purpose Transistor2PD601AWFeaturesHigh collector current (max. 100 mA)Low collector-emitter saturation voltage (max. 500 mV).1 Emitter2 Base3 CollectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 60 VCollector-emitter voltage VCEO 50 VEmitter-base voltage VEBO 6VCollector current IC 100 mAPeak collector current ICM 200 mATotal power dissipation Ptot 200 mWStorage temperature Tstg -65 to +150Junction temperature Tj 150Operating ambient temperature Tamb -65 to +150Thermal resistance from junction to ambient Rth j-a 625 K/W1www.kexin.com.cnSMD Type Transistors2PD601AWElectrical Characteristics Ta = 25Parameter Symbol Testconditons Min Typ Max UnitCollector cut-off current ICBO IE =0; VCB =60V 10 nAIE =0; VCB =60V; Tj =150 5 AEmitter cut-off current IEBO