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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1013 TRANSISTOR (PNP) 1. BASE FEATURE 1 High voltage 2. COLLECTOR 2 2 3 Large continuous collector current capability 3. EMITTER MARKING: 1013 MAXIMUM RATINGS (Ta=25 unless otherwise noted )Symbol Parameter Value UnitVCBO Collector-Base Voltage -160 VVCEO Collector-Emitter Voltage -160 VVEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -1 A PC Collector Power Dissipation 0.5 W Tj Junction Temperature 150 Tstg Storage Temperature -55~+150 RJA Thermal Resistance from Junction to Ambient 250 /W ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO IC=- 100A , IE=0 -160 VCollector-