Скачать даташит для 2sa1013:

SMD Type TransistorsPNP Transistors2SA10131.70 0.1 Features High voltage Large continuous collector current capability0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -160 Collector - Emitter Voltage VCEO -160 V Emitter - Base Voltage VEBO -6 Collector Current - Continuous IC -1 A Collector Power Dissipation PC 0.5 W T hermal Resistance from Junction to Ambient R JA 250 /W Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 Electrical Characteristics Ta = 25Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 A IE=0 -160 Collector- emitter breakdown voltage VCEO Ic= -1 mA IB=0 -160 V Emitter - base breakdown voltage VEBO IE= -100A IC=0 -6 Co