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isc Silicon PNP Power Transistor 2SA1104DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -120V(Min)(BR)CEOGood Linearity of hFEHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -120 VCBOV Collector-Emitter Voltage -120 VCEOV Emitter-Base Voltage -6 VEBOI Collector Current-Continuous -8 ACI Base Current-Continuous -3 ABCollector Power DissipationP 80 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon PNP Power Transistor 2SA1104ELECTRICAL CHARACTERISTICST =25 unless otherwise specified