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JMnic Product Specification Silicon PNP Power Transistors 2SA1104 DESCRIPTION With TO-3PN package High frequency High power dissipation APPLICATIONS For use in audio and general purpose applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter -120 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -8 A PC Collector power dissipation TC=25 80 W Tj Junction temperature 150 Tstg Storage temperature -55~150 JMnic Product Specification Silicon PNP Power Transistors 2SA1104 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP

 

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 2sa1104.pdf Проектирование, MOSFET, Мощность

 2sa1104.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 2sa1104.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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