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Silicon Epitaxial Planar Transistor2SA1104GENERAL DESCRIPTION Silicon PNP high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purposeMT-100QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-emitter voltage peak value VBE = 0VVCESM - 120 VCollector-emitter voltage (open base)VCEO - 120 VCollector current (DC)IC - 8 ACollector current peak value AICM -Total power dissipation Tmb 25Ptot - 80 WCollector-emitter saturation voltage IC = 3.5A; IB = 0.35AVCEsat - 2 VDiode forward voltage IF = 3.5A 1.5 2.0 VVFFall time - stfLIMITING VALUESSYMBOL PARAMETER CONDITIONS MIN MAX UNITCollector-emitter voltage peak value VBE = 0V - 120 VVCESMCollector-emitter voltage (open base) - 120 VVCEOEmitter-base oltage (open colloctor) 5 VVEBOCollector current (DC) - 8 AICBa