Скачать даташит для 2sa1109:

JMnic Product Specification Silicon PNP Power Transistors 2SA1109 DESCRIPTION With TO-3 package Low collector saturation voltage High transition frequency APPLICATIONS For audio frequency amplifier and high power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter -180 V VCEO Collector-emitter voltage Open base -180 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -10 A ICM Collector current-peak -14 A PC Collector power dissipation TC=25 200 W Tj Junction temperature 150 Tstg Storage temperature -65~150 JMnic Product Specification Silicon PNP Power Transistors 2SA1109 CHARACTERISTICS Tj=25 unless otherw