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Ordering number:EN3972PNP Epitaxial Planar Silicon Transistor2SA1813Low-Frequency General-Purpose AmplifierDriver, Muting Circuit ApplicationsFeatures Package Dimensions Very small-sized package permitting 2SA1813-unit:mmapplied sets to be made smaller and slimmer.2059A Adoption of FBET process.[2SA1813] High DC current gain (hFE=500 to 1200). Low collector-to-emitter saturation voltage(VCE(sat) 0.3V). High VEBO (VEBO 15V).1 : Base2 : Emitter3 : CollectorSANYO : MCPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 30 VCollector-to-Emitter Voltage VCEO 25 VEmitter-to-Base Voltage VEBO 15 VCollector Current IC 150 mACollector Current (Pulse) ICP 300 mABase Current IB 30 mACollector Dissipation PC Mounted on board 200 mW