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2SA608(PNP) TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Capable of being used in the low frequency to high frequency range. Large current capacity and wide ASO. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 VVCEO Collector-Emitter Voltage -30 VDimensions in inches and (millimeters)VEBO Emitter-Base Voltage -5 VIC Collector Current -Continuous -100 mA PC Collector Power Dissipation 400 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100A, IE=0 -40 VCollector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -30 VEmitter-Base breakdown voltage V(BR)EBO IE=-100