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isc Silicon PNP Power Transistor 2SB566DESCRIPTIONLow Collector Saturation Voltage:V = -1.0(V)(Max)@I = -2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOComplement to Type 2SD476Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier and powerswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -70 VCBOV Collector-Emitter Voltage -50 VCEOV Emitter-Base Voltage -5 VEBOI Collector Current-Continuous -4 ACI Collector Current-Peak -8 ACMTotal Power DissipationP 40 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon PNP Power Transistor