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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2316DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 80(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSeries regulator,switch and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 100 VCBOV Collector-Emitter Voltage 80 VCEOV Emitter-Base Voltage 6 VEBOI Collector Current-Continuous 6 ACTotal Power DissipationP 50 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkINCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2316ELECTRICAL CHARACTERISTICST =25 unless otherwise specifiedCSYMBOL PAR