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2sc31302sc3130

Transistor2SC3130Silicon NPN epitaxial planer typeFor high-frequency amplification/oscillation/mixingUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh transition frequency fT.Small collector output capacitance Cob and common base reverse1transfer capacitance Crb. 3Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine2packing.Absolute Maximum Ratings (Ta=25C)0.1 to 0.30.4 0.2Parameter Symbol Ratings UnitCollector to base voltage VCBO 15 VCollector to emitter voltage VCEO 10 V1:Base JEDEC:TO236Emitter to base voltage VEBO 3 V2:Emitter EIAJ:SC593:Collector Mini Type PackageCollector current IC 50 mACollector power dissipation PC 150 mWMarking symbol : 1SJunction temperature Tj 150 CStorage temperature Tstg 55 ~ +150

 

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 2sc3130.pdf Проектирование, MOSFET, Мощность

 2sc3130.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 2sc3130.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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