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Ordering number:EN1049DPNP/NPN Epitaxial Planar Silicon Transistors2SA1253/2SC3135High-hFE, AF Amp ApplicationsFeatures Package Dimensions High VEBO.unit:mm Wide ASO and high durability against breakdown.2033[2SA1253/2SC3135]B : BaseC : CollectorE : Emitter( ) : 2SA1253SANYO : SPASpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO ()60 VCollector-to-Emitter Voltage VCEO ()50 VEmitter-to-Base Voltage VEBO ()15 VCollector Current IC ()200 mACollector Current (Pulse) ICP ()400 mACollector Dissipation PC 250 mWJunction Temperature Tj 150CStorage Temperature Tstg 55 to +150CElectrical Characteristics at Ta = 25CRatingsParameter Symbol Conditions Unitmin typ maxCollector Cutoff Current ICBO VCB=()40V, IE=0 ()0.1 AEmitt