Скачать даташит для 2sc3138:

2SC3138 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3138 High Voltage Switching Applications Unit: mm High voltage: VCBO = 200 V (max) V = 200 V (max) CEO Small flat package Complementary to 2SA1255 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 200 VCollector-emitter voltage VCEO 200 VEmitter-base voltage VEBO 5 VCollector current IC 50 mABase current IB 20 mACollector power dissipation PC 150 mWJunction temperature Tj 125 CJEDEC TO-236MODStorage temperature range Tstg -55~125 C JEITA SC-59Marking TOSHIBA 2-3F1AWeight: 0.012 g (typ.) 1 2003-03-27 2SC3138 Electrical Characteristics (Ta == 25C) ==Characteristics Symbol Test Condition Min Typ. Max UnitCollector cut-off current ICBO VCB = 200 V, IE = 0 0.1 A Emitter c